MJW21191 データシートの表示（PDF） - New Jersey Semiconductor
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MJW21191 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
MJW21191
DESCRIPTION
• DC Current Gain Specified up to 8.0 Amperes
at Temperature
• HighSOA:20A, 18V, 100ms
• TO-3PN Package
• Complement to Type MJW21192
APPLICATIONS
• designed for power audio output, or high power drivers
in audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=2S'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
5
V
11I
1 2:
'-<
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
m
c •*-
Y *"
?T
•H
1f
K
•;C;) 't
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Pulse
16
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
2
A
100
W
150
"C
Tstg
Storage Temperature Range
-55-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.65 •c/w
50 •c/w
^N"°
mm
DIM MIN MAX
A 19.90 20.10
B 15.38 15.42
C 4.75 4.85
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.98 3.02
H 3.20 3.40
J 0.595 0.605
K 19.95 20.25
L 1.98 2.02
N 10.8S 10.91
Q 4.95 5.05
Rs
u
3.35
1.995
5.90
3.45
2.005
6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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