MJ11022 データシートの表示（PDF） - Inchange Semiconductor
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MJ11022 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11022
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
250
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 0.15A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A, VCE= 5V
VCE=250V;VBE(off)=1.5V
VCE=250V;VBE(off)=1.5V;TC=150℃
VCE= 125V; IB= 0
2.0
V
3.4
V
3.8
V
2.8
V
0.5
5.0
mA
1.0 mA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
Switching Times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VEB= 5V; IC= 0
IC= 10A, VCE= 5V
400
IC= 15A, VCE= 5V
100
IE= 0, VCB= 10V; ftest= 0.1MHz
2.0 mA
15000
400 pF
VCC= 100V; IC= 10A; IB1= 0.1A
VBE(off)= 5V
0.15
μs
1.2
μs
4.4
μs
10
μs
isc Website：www.iscsemi.cn
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