MJE243 データシートの表示（PDF） - Inchange Semiconductor

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MJE243

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: VCEO(SUS) = 100 V(Min)

·DC Current Gain-

: hFE = 40(Min) @ IC= 0.2 A

·Low Collector Saturation Voltage-

: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A

·Complement to Type MJE253

APPLICATIONS

·Designed for low power audio amplifier and low-current,

high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

IBB

Base Current

Collector Power Dissipation

PC

Ta=25℃

Collector Power Dissipation

TC=25℃

Ti

Junction Temperature

Tstg

Storage Temperature Range

1

A

1.5

W

15

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

8.34 ℃/W

Thermal Resistance,Junction to Ambient 83.4 ℃/W

isc Product Specification

MJE243

isc Website：www.iscsemi.cn

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