IXFN55N50F データシートの表示（PDF） - IXYS CORPORATION
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IXFN55N50F Datasheet PDF : 2 Pages
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Advance Technical Information
HiPerRFTM
IXFN 55N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
Test Conditions
D
G
S
S
Maximum Ratings
V
DSS
V
DGR
VGS
VGSM
I
D25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
500
V
500
V
±20
V
±30
V
55
A
220
A
55
A
60
mJ
3.0
J
5 V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
TJ
VISOL
Md
Weight
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
V
DSS
V
GH(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
500
VDS = VGS, ID = 8 mA
3.0
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
5.5 V
±200 nA
100 µA
3 mA
85 mΩ
V=
DSS
ID25 =
= RDS(on)
500 V
55 A
85 mΩ
trr ≤ 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l RF capable Mosfets
l Ruggedpolysilicongatecellstructure
l Double metal process for low gate
resistance
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsicrectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l Pulsegeneration
l Laserdrivers
Advantages
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
98854 (8/01)
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