NXP Semiconductors
Low-voltage variable capacitance diode
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR
rs
Cd
--C-----d------1----V-----
Cd 7.5 V
reverse current
diode series resistance
diode capacitance
capacitance ratio
VR = 10 V; see Fig.3
VR = 10 V; Tj = 85 C; see Fig.3
f = 470 MHz; Cd = 9 pF
f = 1 MHz; see Figs 2 and 4
VR = 1 V
VR = 4 V
VR = 7.5 V
f = 1 MHz
Product specification
BB156
MIN. TYP. MAX. UNIT
10 nA
200 nA
0.4 0.7
14.4 16
7.6 8.6
4.2 4.8
2.7 3.3
17.6 pF
9.6 pF
5.4 pF
3.9
2004 Mar 01
3