ATA6661 データシートの表示（PDF） - Atmel Corporation

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ATA6661

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Atmel Corporation 

Figure 3-1. Mode of Operation

Unpowered Mode

VBatt = 0V

b

a

a: VS > 5V

b: VS < 4V

c: Bus wake-up event

d: Wake-up from Wake switch

Pre-normal Mode

INH: high (INH internal High Side switch ON)

b

b

Communication: OFF

EN = 1

d

Normal Mode

INH: high (INH HS switch ON)

Communication: ON

EN = 0

Go to sleep command

EN = 1

Local wake-up event

c

Sleep Mode

INH: high impedance (INH HS switch OFF)

Communication: OFF

3.14

Fail-safe Features

• There are now reverse currents < 3 µA at pin LIN during loss of VBAT or GND. Optimal

behavior for bus systems where some slave nodes supplied from battery or ignition.

• Pin EN provides pull-down resistor to force the transceiver into sleep mode if EN is

disconnected.

• Pin RXD is set floating if VBAT is disconnected.

• Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected.

• The LIN output driver has a current limitation and if the junction temperature Tj exceeds the

thermal shut-down temperature Toff the output driver switches off.

• The implemented hysteresis Thys enables the LIN output again after the temperature has

been decreased.

3.15

Physical Layer Compatibility

Since the LIN physical layer is independent from higher LIN layers (e.g. LIN protocol layer), all

nodes with a LIN physical layer according to this revision can be mixed with LIN physical layer

nodes, which are according to older versions (i.e. LIN 1.0, LIN 1.1, LIN 1.2, LIN 1.3), without any

restrictions. A higher ratio of nodes according to this LIN physical layer specification or the one

of revision 2.0 will result in a higher transmission reliability.

6 ATA6661

4729M–AUTO–02/09

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