BD168 データシートの表示（PDF） - Continental Device India Limited
部品番号
コンポーネント説明
メーカー
BD168 Datasheet PDF : 3 Pages
| |||
BD166, BD168, BD170
Collector current
IC
Base current
IB
Total power dissipation up to TA = 25°C Ptot
Derate above 25°C
Total power dissipation up to TC = 25°C Ptot
Derate above 25°C
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth jc
Rth ja
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 45 V
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 0.1 A; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 0.5 A; IB = 0.05 A
Base-emitter on voltage
IC = 0.5 A; VCE = 2 V
D.C. curent gain
IC = 0.15 A; VCE = 2 V
IC = 0.5 A; VCE = 2 V
Transition frequency f = 1 MHz
IC = 500 mA; VCE = 2V
ICBO
ICBO
ICBO
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VBE(on)*
hFE*
hFE*
fT
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
max.
max.
max.
max
max.
max
max.
1.5
0.5
1.25
10
20
160
150
–65 to +150
A
A
W
mW/°C
W
mW/°C
°C
ºC
6.25
°C/W
100
°C/W
166 168 170
max. 0.1 – – mA
max. – 0.1 – mA
max. – – 0.1 mA
max.
1.0
mA
min. 45 60 80 V
min. 45 60 80 V
min.
5.0
V
max.
0.5
V
max.
0.95
V
min.
40
min.
15
min.
6.0
MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Share Link: 