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AN729 データシートの表示(PDF) - Silicon Laboratories

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AN729 Datasheet PDF : 8 Pages
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AN729
This simple architecture provides numerous advantages over optocouplers:
Pin and Package Drop-In Opto-Coupler Upgrade
Faster propagation time, better parametric stability over voltage and temperature, 2x to 3x lower internal
parasitic coupling compared to optocouplers.
Standard CMOS Process Technology
CMOS is a well understood process technology with 40+ years of learning and offers 5.5 times lower
failures-in-time (FIT) rate than GaAs-based optocouplers, a time dependent dielectric breakdown (TDDB)
of 60 years, and a mean time-to-failure (MTTF) of 87 years. CMOS also provides an operating temperature
range of –40 to +125 °C compared to –40 to +85 °C for optocouplers, greater parametric stability over
voltage and temperature, and lower operating power versus optocouplers.
Precise Current Thresholds with Hysteresis
The Si826x output is either low or high, with no ambiguous output states and excellent threshold stability
over voltage and temperature. There are no current transfer ratio (CTR) issues to address.
Improved Performance
Shorter propagation delay time and PWD, wider operating temperature range, and greater parametric
operating stability than optocouplers.
Silicon Dioxide Based Capacitive Isolation Barrier
Silicon dioxide is an ultra-stable material enabling an unparalleled lifetime of over 60 years, compared to
less than 15 years in optocouplers.
Superior Surge Tolerance
Withstands 10 kV surge per IEC 60065
Wide Product Range
The Si87xx digital isolators are available in gull-wing PDIP8, SOIC8, LGA8, and SDIP6 packages and offer
optional internal pull-up resistor and external enable. (For more information, see the Si87xx Digital isolator
data sheet.)
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Rev. 0.1

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