VUM85-05A データシートの表示（PDF） - IXYS CORPORATION
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VUM85-05A Datasheet PDF : 3 Pages
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Symbol
VGS(th)
IGSS
IDSS
RDS(on)
gfs
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qg
RthJC
RthCH
VF, VT
IRRM, IDRM
VT0
rT
VGT
IGT
VGD
IGD
VRGM
IH
IL
(di/dt)cr
tgd
tq
PGM
PGAVM
R
thJC
RthCH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
MOSFET T 1
VDS = ±20 V, ID = 30 mA
VGS = ±20 V, VDS = 0 V
VDS = VDSS, VGS = 0 V
VDS = 0,8•VDSS, VGS = 0 V, TVJ = 125°C
ID = ½ ID25, VGS = 10 V, pulse test
t £ 300 µs, d £ 2%
2
3
4V
±1.5 µA
0.5 1.4 mA
1
7 mA
36 mW
VDS = 10 V, ID = ½ ID25, t = < 300 µs
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V
R
G
=
1
W,
L
=
100
µH,
TVJ
=
125°C
75 145
16
33
65
30
S
25 ns
45 ns
80 ns
40 ns
VDS = 25 V, f = 1 MHz, VGS = 0 V
30
nF
3
nF
1
nF
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V
945 1120 nC
195 280 nC
435 595 nC
0.09 K/W
0.05
K/W
Single Phase Bridge Th1, D2, D3, D4
IF, IT = 45 A, TVJ = 25°C
TVJ = 125°C
VD, VR = VDRM, VRRM,
TVJ = 25°C
VD, VR = 0,8•VDRM, VRRM, TVJ = 125°C
For power-loss calculations only
TVJ = 150°C
VD = 6 V
1.50 V
1.55 V
0.5 1.4 mA
1
7 mA
0.85 V
14 mW
1.5 V
100 mA
VD = 2/3 VDRM, TVJ = 150°C
0.2 V
5 mA
10 V
VD = 6 V, RGK = oo
IG = 0.45 A, diG/dt = 0.45 A/µs, tp = 10 µs
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = 45 A, repetitive
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = IDAV, non-repetitive
IG = 0.45 A, diG/dt = 0.45 A/µs, VD = ½ VDRM
IT = 20 A, di/dt = -10 A/µs, VR = 100 V, VD = 2/3VDRM 150
tp = 200 µs, dv/dt = 15 V/µs, TVJ = 150°C
IT = Id(AV), TVJ = 150°C
tp = 30 µs
tp = 300 µs
200 mA
450 mA
150 A/µs
500 A/µs
2 µs
µs
10 W
5W
0,5 W
DC per diode / thyristor
DC per diode / thyristor
1.3 K/W
0.4
K/W
© 2000 IXYS All rights reserved
VUM 85-05A
2-3
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