74LVC245A データシートの表示（PDF） - ON Semiconductor
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74LVC245A Datasheet PDF : 9 Pages
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74LVC245A
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
−40 to +855C
−40 to +1255C
Symbol
Parameter
Conditions
Typ
Typ
Min (Note 4) Max Min (Note 4) Max Unit
tpd
Propagation Delay (Note 5)
An to Bn, Bn to An
VCC = 1.2 V
−
VCC = 1.65 V to 1.95 V 1.5
VCC = 2.3 V to 2.7 V
1.0
VCC = 2.7 V
1.0
VCC = 3.0 V to 3.6 V
1.0
17.0
−
−
6.5 14.6 1.0
3.4
7.6 1.0
3.4
7.3 1.0
2.9
6.3 1.0
−
−
ns
−
16.9
−
8.7
−
9.5
−
8.0
ten
Enable Time (Note 6)
OE to An, Bn
VCC = 1.2 V
−
VCC = 1.65 V to 1.95 V 1.0
VCC = 2.3 V to 2.7 V
1.0
VCC = 2.7 V
1.0
VCC = 3.0 V to 3.6 V
0.5
22.0
−
−
8.3 19.5 1.0
4.6 10.7 1.0
4.8
9.5 0.5
3.7
8.5 0.5
−
−
ns
−
22.5
−
12.4
−
12.0
−
11.0
tdis
Disable Time (Note 7)
OE to An, Bn
VCC = 1.2 V
−
VCC = 1.65 V to 1.95 V 1.0
VCC = 2.3 V to 2.7 V
1.0
VCC = 2.7 V
1.0
VCC = 3.0 V to 3.6 V
0.5
12.0
−
−
5.5 12.3 1.0
3.1
7.1 1.0
3.9
8.0 0.5
3.6
7.0 0.5
−
−
ns
−
14.2
−
8.2
−
10.0
−
9.0
tsk(0) Output Skew Time (Note 8)
−
−
1.0
−
−
1.5
ns
4. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
5. tpd is the same as tPLH and tPHL.
6. ten is the same as tPZL and tPZH.
7. tdis is the same as tPLZ and tPHZ.
8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
TA = +25°C
Min Typ Max Unit
VOLP Dynamic LOW Peak Voltage (Note 9)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.6
V
VOLV Dynamic LOW Valley Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
−0.8
V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.6
V
9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN Input Capacitance (OE, T/R)
VCC = 3.3 V, VI = 0 V or VCC
4.0
pF
CI/O Input/Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
10.0
pF
CPD Power Dissipation Capacitance
(Note 10)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
7.7
VCC = 2.3 V to 2.7 V
11.3
VCC = 3.0 V to 3.6 V
14.4
10. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD x VCC2 x fi x N + S(CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
N = number of outputs switching
S(CL x VCC2 x fo) = sum of the outputs.
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