PMBF107 データシートの表示（PDF） - Philips Electronics

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PMBF107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

PMBF107

300

handbook, halfpage

ID

(mA)

200

MDA784

100

0

0

1

2

3

4

VGS (V)

handbook,3h0alfpage

RDSon

(Ω)

26

22

18

14

10

1

MDA702

VGS = 3 V

4V

5V

10 V

10

102

103

ID (mA)

Fig.6 Typical transfer characteristic;

VDS = 10 V; Tj = 25 °C.

Fig.7 Typical on-resistance as a function of drain

current; Tj = 25 °C.

60

handbook, halfpage

C

(pF)

40

20

0

0

10

MDA703

Ciss

Coss

Crss

20

30

VDS (V)

Fig.8 Typical capacitances as a function of

drain-source voltage; VGS = 0; f = 1 MHz;

Tj = 25 °C.

April 1995

6

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