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BGD702 データシートの表示(PDF) - Philips Electronics

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BGD702 Datasheet PDF : 12 Pages
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Philips Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702
Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75
SYMBOL
PARAMETER
CONDITIONS
Gp
power gain
f = 50 MHz
f = 600 MHz
SL
slope cable equivalent
f = 40 to 600 MHz
FL
flatness of frequency response f = 40 to 600 MHz
s11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
s22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
s21
CTB
phase response
composite triple beat
f = 50 MHz
85 channels flat; Vo = 44 dBmV;
measured at 595.25 MHz
Xmod
cross modulation
85 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
CSO
composite second order distortion 85 channels flat; Vo = 44 dBmV;
measured at 596.5 MHz
d2
second order distortion
Vo
output voltage
NF
noise figure
note 1
dim = 60 dB; note 2
see Table 1
Itot
total current consumption (DC) note 3
MIN.
18
18.5
0.2
20
19
18
17
20
19
18
17
45
TYP.
18.5
19.4
27
30
29
22
23
24
23
21
66
MAX.
19
2
±0.3
+45
65
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
66 65 dB
68 60 dB
80 70 dB
64
67
dBmV
dB
425 435 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo 6 dB;
fr = 599.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 588.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
4

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