Philips Semiconductors
750 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD702
Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
Gp
power gain
f = 50 MHz
f = 550 MHz
SL
slope cable equivalent
f = 40 to 550 MHz
FL
flatness of frequency response f = 40 to 550 MHz
s11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
s21
CTB
phase response
composite triple beat
f = 50 MHz
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
Xmod
cross modulation
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
CSO
composite second order distortion 77 channels flat; Vo = 44 dBmV;
measured at 548.5 MHz
d2
second order distortion
Vo
output voltage
NF
noise figure
note 1
dim = −60 dB; note 2
see Table 1
Itot
total current consumption (DC) note 3
MIN.
18
18.5
0.2
−
20
19
18
17
20
19
18
17
−45
−
TYP.
18.5
19.3
−
−
27
30
29
22
23
24
23
21
−
−68
MAX.
19
−
2
±0.3
−
−
−
−
−
−
−
−
+45
−67
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
−
−68 −67 dB
−
−68 −62 dB
−
−81 −72 dB
64.5 68
−
dBmV
−
−
−
dB
−
425 435 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
5