ESDALC6V1W5(2002) データシートの表示（PDF） - STMicroelectronics

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ESDALC6V1W5
(Rev.:2002)

QUAD TRANSIL™ ARRAY FOR ESD PROTECTION

STMicroelectronics 

ESDALC6V1W5

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol

Parameter

Test conditions

VPP

ESD discharge - MIL STD 883E - Method 3015-7

IEC61000-4-2 air discharge

IEC61000-4-2 contact discharge

PPP

Peak pulse power (8/20 µs)

Tj

Junction temperature

Tstg

Storage temperature range

Top

Operating temperature range

Value

Unit

± 25

kV

± 15

±8

25

W

150

°C

- 55 to + 150 °C

- 40 to + 150 °C

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol

Parameter

I

VRM

Stand-off voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current

IPP

Peak pulse current

C

Capacitance per line

VCL VBR VRM

IRM

V

IR

Rd

Dynamic resistance

slope : 1 / Rd

IPP

Types

VBR @

IR

min.

max.

V

V

mA

ESDALC6V1W5 6.1

7.2

1

Note 1 : Square pulse Ipp = 15A, tp=2.5µs.

Note 2 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C)

IRM @ VRM

max.

µA

V

1

3

Rd

typ.

note 1

mΩ

1100

αT

max.

note 2

10-4/°C

6

C

typ.

3V bias

pF

7.5

C

max.

3V bias

pF

9.5

2/9

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