ESDALC6V1W5(2002) データシートの表示（PDF） - STMicroelectronics

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ESDALC6V1W5
(Rev.:2002)

QUAD TRANSIL™ ARRAY FOR ESD PROTECTION

STMicroelectronics 

ESDALC6V1W5

CROSSTALK BEHAVIOR

Fig. A5: Crosstalk phenomenon

RG1

VG1

RG2

VG2

Line 1

Line 2

DRIVERS

RL1

α1VG1 + β V 12 G2

RL2

α2VG2 + β V 21 G1

RECEIVERS

The crosstalk phenomena are due to the coupling between 2 lines. Coupling factors ( β12 or β21 ) increase

when the gap across lines decreases, particularly in silicon dice. In the example above, the expected

signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value β21VG2. This part of

the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. This

phenomenon has to be taken into account when the drivers impose fast digital data or high frequency

analog signals. The perturbed line will be more affected if it works with low voltage signal or high load

impedance (few kΩ)

Fig. A6: Analog crosstalk measurements

To Port1

RTFETSETSBTOBAORADRD

I/O4

To Port2

I/O1

6/9

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