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SI5341C-A-GM データシートの表示(PDF) - Silicon Laboratories

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SI5341C-A-GM Datasheet PDF : 48 Pages
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Si5341/40
Table 7. LVCMOS Clock Output Specifications (Continued)
(VDD = 1.8 V ±5%, VDDA = 3.3 V ±5%, VDDO = 1.8 V ±5%, 2.5 V ±5%, or 3.3 V ±5%, TA = –40 to 85 °C)
Parameter
Symbol
Output Voltage Low1, 2, 3 VOL
Test Condition
CMOS1
CMOS2
CMOS3
IOL = 10 mA
IOL = 12 mA
IOL = 17 mA
CMOS1
CMOS2
CMOS3
IOH = -6 mA
IOL = 8 mA
IOL = 11 mA
LVCMOS Rise and Fall
Times3
(20% to 80%)
CMOS1 IOH = –3 mA
CMOS2 IOH = –4 mA
CMOS3
IOL = 5 mA
tr/tf
VDDO = 3.3V
VDDO = 2.5 V
VDDO = 1.8 V
Min
Typ
VDDO = 3.3 V
VDDO = 2.5 V
VDDO = 1.8 V
360
420
280
Max
Units
VDDO x 0.15 V
VDDO x 0.15 V
VDDO x 0.15 V
ps
ps
ps
Notes:
1. Driver strength is a register programmable setting and stored in NVM. Options are CMOS1, CMOS2, CMOS3.
2. IOL/IOH is measured at VOL/VOH as shown in the DC test configuration
3. A series termination resistor (Rs) is recommended to help match the source impedance to a 50 Ohm PCB trace. A 5 pF
capacitive load is assumed.
DC Test Configuration
Zs
VOL/VOH
IOL/IOH
AC Test Configuration
Zs
Rs
50
Zs + Rs = 50 Ohms
5 pF
Preliminary Rev. 0.9
11

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