2SJ530L データシートの表示（PDF） - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SJ530L Datasheet PDF : 9 Pages
| |||
2SJ530(L),2SJ530(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
Pulse Test
–3.2
–2.4
–1.6
–15 A
–10 A
–0.8
–5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
1
vs. Drain Current
0.5
0.2
VGS = –4 V
0.1
0.05
–10 V
0.02
Pulse Test
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
I D = –15 A
–10 A –5 A
0.2 VGS = –4 V
0.1
–15 A
–10 V
0
-5,–10A
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
100
Drain Current
30
10
Ta = –25 °C
3
25 °C
75 °C
1
0.3
V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
4
Share Link: 