C3171 データシートの表示（PDF） - New Jersey Semiconductor
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C3171 Datasheet PDF : 2 Pages
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^s.m.i-donducto't iPioducki, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3171
DESCRIPTION
• Collector-Emiiter Sustaining Voltage-
: VCEo(susr 400V(Min.)
• Low Collector Saturation Voltage
:VCE(«tr 1.0V(Max.)@lc=5A
• High Speed Switching
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter- Base Voltage
7
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25r
PC
Collector Power Dissipation
@TC=25*C
Tr
Junction Temperature
Tstg
Storage Temperature Range
20
A
3
W
100
150
"C
-55-150
"C
1£3
PIN 1.BASE
2. COLLECTOR
3,aHTTER
TC-SPFs package
•4 ^ Q
^
«. C
i—
A
^
r
K
T •».*;
T
D
-R
mm
DIM WIN MAX
A 20,70 2130
B 14.70 15.30
C
4.SO 5.20
D 0.90 1.10
F
3.20 3.40
H
3.70 4.30
J
0.50 0.70
K 16.40 17.00
L
1.90 2,10
N 10.30 11.00
Q
5.60 6.00
R
1.30 2.20
S
3.10 3.50
T
S.70 9,30
U
0.55 0.7S
X?
N.I Semi-CoiKluetors reserves the right to change tost conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time ol'gciint
to press. lloue\cr, N.I Senii-Condiiclors assumes no responsibility Ibranv errors or omissions discovered in its u>e."
NJ Seiiii-Coudiiclois enctiura.ue-i customers to verify thai datasheets are current before placing orders.
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