BAW78D データシートの表示（PDF） - Infineon Technologies

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BAW78D

Silicon Switching Diodes

Infineon Technologies 

BAW78.../BAW79...

Thermal Resistance

Parameter

Junction - soldering point1)

BAW78D

BAW79D

Symbol

RthJS

Value

Unit

K/W

≤ 25

≤ 35

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

V(BR)

400 -

-V

I(BR) = 100 µA

Reverse current

IR

-

-

µA

VR = 400 V

-

-

1

VR = 400 V, TA = 150 °C

50

Forward voltage

VF

V

IF = 1 A

-

-

1.6

IF = 2 A

-

-

2

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 200mA, IR = 200mA, measured at IR = 20mA

RL = 100Ω

-

10

-

1

,

- pF

- µs

Test circuit for reverse recovery time

D.U.T.

ΙF

Oscillograph

EHN00019

Puls generator: tp = 10µs, D = 0.05,

tr = 0.6ns, Ri = 50Ω

Oscillograp: R = 50Ω, tr = 0.35ns

C ≤ 1pF

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

2007-04-20

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