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ER100S データシートの表示(PDF) - Galaxy Semi-Conductor

部品番号
コンポーネント説明
メーカー
ER100S
BILIN
Galaxy Semi-Conductor BILIN
ER100S Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES
ER100S--- ER106S
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
50VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(-)
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 5 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
10
ER100S-ER102S
1.0
FIG.3 -- FORW ARD DERATING CURVE
z
1.0
ER103S-ER104S
0.1
ER106S
0.01
TJ = 25
0.00 1
0 0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE, V O LT S
0.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(95mm)Lead Length
0
0 2 5 5 0 7 5 1 00 1 25 1 50 175
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
TJ = 25
f = 1.0MHz
Vsig = 50mVp-p
10
1
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
FIG.5 -- PEAK FORW ARD SURGE CURRENT
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
0
1
5
20
50 100
NUMBER OF CYCLES AT 60Hz
Document Number 0264033
BLGALAXY ELECTRICAL
www.galaxycn.com
2.

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