2SC4591 データシートの表示（PDF） - Inchange Semiconductor
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2SC4591 Datasheet PDF : 2 Pages
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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4591
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
ICEO
Collector Cutoff Current
VCE= 9V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 1.5V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 5V; f= 1MHz
PG
Power Gain
IC= 20mA ; VCE= 5V; f= 900MHz
NF
Noise Figure
IC= 5mA ; VCE= 5V; f= 900MHz
MIN TYP. MAX UNIT
15
V
1.0 μA
1.0 mA
10 μA
40
250
6.5 9.0
GHz
0.8 1.5 pF
9.5 12.5
dB
1.2 2.5 dB
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