Philips Semiconductors
Magnetic field sensor
Preliminary specification
KMZ11B1
DESCRIPTION
The KMZ11B1 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
displacement sensors, proximity detectors, etc.
The sensor can be operated at any frequency between DC
and 1 MHz.
PINNING
PIN
1
2
3
4
5 to 8
SYMBOL
+VO
GND
−VO
VCC
n.c.
DESCRIPTION
output voltage
ground
output voltage
supply voltage
not connected
handbook, halfpa8ge
pin 1
index 1
5
Hy
Hx
4
MGD804
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCC
Hy
Hx
S
PARAMETER
bridge supply voltage
magnetic field strength
auxiliary field
sensitivity
Rbridge
Voffset
bridge resistance
offset voltage
CIRCUIT DIAGRAM
MIN.
−
−2
−
−
1.9
−1.5
TYP.
5
−
3
4
−
−
MAX.
−
+2
−
−
2.9
+1.5
UNIT
V
kA/m
kA/m
m-k---A--V----⁄-⁄--m-V--
kΩ
mV/V
handbook, full pagewidth
MLC716
1996 Dec 11
1
+VO
2
GND
3
4
–VO VCC
Fig.2 Simplified circuit diagram.
2