SFH9244 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
SFH9244 Datasheet PDF : 7 Pages
| |||
SFH9244
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-250 -- -- V
-- -0.22 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.8 Ω
-- 5.8 -- S
-- 1205 1565
-- 175 265 pF
-- 65 100
-- 14 40
-- 21 50
ns
-- 47 105
-- 18 45
-- 45 58
-- 8.7 -- nC
-- 23.4 --
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-250V
VDS=-200V,TC=125oC
VGS=-10V,ID=-4.4A O4
VDS=-40V,ID=-4.4A O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
VDD=-125V,ID=-8.6A,
RG=9.1Ω
See Fig 13
O4 O5
VDS=-200V,VGS=-10V,
ID=-8.6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -8.7
Integral reverse pn-diode
A
-- -35
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-8.7A,VGS=0V
-- 210 -- ns TJ=25oC,IF=-8.6A
-- 1.82 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=10mH, IAS=-8.7A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O <_ <_ <_ 3 ISD -8.6A, di/dt 450A/µs, VDD BVDSS , Starting TJ =25oC
O <_ 4 Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O5 Essentially Independent of Operating Temperature
Share Link: 