PN3642(1997) データシートの表示（PDF） - Fairchild Semiconductor
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PN3642 Datasheet PDF : 2 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
45
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICES
Collector Cutoff Current
VCE = 50 V, IE = 0,
VCE = 50 V, IE = 0, TA = 65 °C
50
nA
1.0
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 150 mA, IB = 15 mA
40
120
15
0.22
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
Gpe
Amplifier Power Gain
η
Collector Efficiency
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, f = 140 kHz
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
VCE = 15 V, IC = 0,
Rg = 140 Ω, f = 30 MHz,
RL = 260 Ω
VCE = 15 V, IC = 0,
RS = 140 Ω, f = 30 MHz,
RL = 260 Ω
8.0
pF
1.5
10
dB
60
%
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