Rev. 1.0
BSP88
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.35 A, VGS = 10 V
BSP88
30
W
24
22
20
18
16
14
12
10
8
98%
6
4
typ
2
0
-60 -20 20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 3
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID = 108 µA
1.8
V
98%
1.4
1.2
typ.
1
0.8
2%
0.6
0.4
0.2
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
10 1 BSP88
pF
A
Ciss
10 2
10 0
10 1
10 0
0
Coss
Crss
5
10
15
20
V
30
VDS
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2002-11-12