SD1899 データシートの表示（PDF） - STMicroelectronics
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SD1899 Datasheet PDF : 5 Pages
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SD1899
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
... REFRACTORY/GOLD METALLIZATION
EFFICIENCY - 50% TYPICAL
POUT = 30 W MIN. WITH 9.3 dB GAIN
.250 x .320 2LFL (M170)
epoxy sealed
ORDER CODE
SD1899
BRANDING
SD1899
PIN CONNECTION
DE S CR I P TI ON
The SD1899 is a common base silicon NPN bipolar
device optimized for 1.6 GHz SATCOM applica-
tions.
SD1899 offers superior gain and collector effi-
ciency, making it an ideal choice for Class C power
amplifiers used in portable as well as fixed SAT-
COM terminals.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEB O
Emitter-Base Voltage
IC
Device Current
PDISS
Power Dissipation (+25°C)
TJ
Junction Temperature
TST G
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
January 6, 1997
1. Collector
2. Emitter
3. Base
V alu e
Unit
45
V
45
V
3.0
V
3.5
A
64. 8
W
+200
°C
− 65 to +150
°C
2.7
°C/W
1/5
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