SD1460 データシートの表示（PDF） - New Jersey Semiconductor

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SD1460

VHF Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

VHF Power Transistor

The SD1460 is a 28V VHF Transistor designed primarily to be used in FM

broadcast applications in class A,B or C modes of operation. The device utilizes

gold top and back metal, and incorporates emitter resistors for improved

ruggedness.

- 108MHz

- 150 Watt Pout

- 28V Supply

- lOdB Gain

Gold Metallization

Diffused Emitter Ballast Resistors for Ruggedness

SD1460

150 W - 108MHz

VHF POWER

TRANSISOTR

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Total Device Dissipation (TC=25C)

Derate above 70C

Operating Junction Temperature

Storage Temperature Range

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction to Case (Tc=70C)

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ic = 100mA, IB=0)

Collector-Base Breakdown Voltage (Ic=100mA, IE=0)

Emitter-Base Breakdown Voltage (E=20mA, E=0)

Collector-Emitter Breakdown Voltage (E=100mA, RBE=10 Ohms

ON CHARACTERISTICS

DC Current Gain (Ic= 1 A, VCE = 5V)

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 28V, IE=0, f =1 MHz)

.500 SOE F

Symbol

VCEO

VCBO

VEBO

Ic

PD

Tj

Tstg

Value

25

60

3.0

16

150

1

200

-65 to +200

Unit

V

V

V

A

Watts

w/c

c

c

Symbol

R theta JC

Max

Unit

1

c/w

Symbol Min Typ Max Unit

V(BR)CEO

25

V

V(BR)CBO

60

V

V(BR)EBO

3.0

V

V(BR)CER

55

V

hFE

20

150

cob

—

...

150 PF

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