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SM8S10A(2016) データシートの表示(PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

部品番号
コンポーネント説明
メーカー
SM8S10A
(Rev.:2016)
LEIDITECH
Shanghai Leiditech Electronic Technology Co., Ltd LEIDITECH
SM8S10A Datasheet PDF : 4 Pages
1 2 3 4
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
SM8SXXA Series
Surface Mount
Transient Voltage Suppressors
Features
l Peak power dissipation 6600W @10 x 1000 us Pulse
l Glass passivated junction.
l Excellent clamping capability.
l High surge capability
l Low leakage current
l Low forward voltage drop
l Available in uni-directional polarity only
l TJ = 175°C capability suitable for high reliability and
automotive requirement
l Meets ISO7637-2 surge specification (varied by
test condition)
l Halogen free and RoHS compliant
l Lead-free finish
Mechanical Characteristics
SOD-BLOCK
Cathode
Cathode
Anode
Anode
l CASE: SOD-BLOCK Molded Plastic over glass passivated junction
l Polarity: Heatsink is Anode
l Terminal: Solder plated
Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Peak Pulse Power Dissipation on 10/1000 us Waveform
Peak Pulse Power Dissipation on 10/10000 us Waveform
Power Dissipation on Infinite Heat Sink at TC = 25 °C (Fig. 1)
Peak Pulse Current of on 10/1000us Waveform
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 1.)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
PPPM
PPPM
PD
IPPM
IFSM
TJ
TSTG
Value
6600
5200
8.0
See next table
700
-55 to 175
-55 to 175
Units
W
W
W
A
A
°C
°C
Notes:
1. Non-repetitive current pulse derated above TA=25°C
Rev. 2.0, 28-Nov.-16
WWW.SEMITECH.CN

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