KSB1023 データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

KSB1023

PNP Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

-5

-4

-3

IB = -300uA

IB

IB

= -275uA

= -250uA

-2

IB = -225uA

IB = -200uA

-1

IB = -175uA

IB = 0

-0

-0

-1

-2

-3

-4

-5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

VBE(sat)

-1

VCE(sat)

IC = 500 IB

-0.1

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturating Voltage

10

IC,max(pulse)

IC,max(DC)

1

0.1

1

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

©2000 Fairchild Semiconductor International

10k

VCE = -2V

1k

100

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

-4

VCE = -2V

-3

-2

-1

-0

-0.0

-0.8

-1.6

-2.4

-3.2

VBE[V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

32

28

24

20

16

12

8

4

0

0

50

100

150

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A, February 2000

Share Link: