DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PSB95 データシートの表示(PDF) - Powersem GmbH

部品番号
コンポーネント説明
メーカー
PSB95
Powersem
Powersem GmbH Powersem
PSB95 Datasheet PDF : 2 Pages
1 2
PSB 95
200
A
160
120
T=150°C
I-I-FF-S(-MO-V-)
1.6
1.4
1.2
IFSM (A)
TVJ=45°C TVJ=150°C
1200
1040
10 4
2
As
TVJ=45°C
TVJ=150°C
80
40
IF
T=25°C
0
VF 1
1.5 V
1
0.8
0.6
0.4
100
0 VRRM
1/2 VRRM
1 VRRM
101 t[ms] 102
10 3
1
103
2
4 6 10
t [ms]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
300
[W] PSB 95
250
80
TC
85
0.19 0.11 = RTHCA [K/W] 90
0.28
95
100
200
105
0.44
110
150
100
50
PVTOT
0
50
IFAVM
0.77
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.77
100 0
50
[A] Tamb
100
115
120
125
130
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig. 3 i2dt versus time
(1-10ms) per diode (or thyristor)
120
[A]
100
80
DC
sin.180°
rec.120°
rec.60°
rec.30°
60
40
20
I dAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
1.2
1
0.8
0.6
Z thJK
Z thJC
0.4
0.2
Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str.53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]