BF470 データシートの表示（PDF） - Philips Electronics
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BF470 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistors
Product specification
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF470
BF472
collector-emitter voltage
BF470
BF472
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 114 °C
MIN. MAX. UNIT
−
−250 V
−
−300 V
−
−250 V
−
−300 V
−
−5
V
−
−50
mA
−
−100 mA
−
−50
mA
−
1.8
W
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air; note 1
thermal resistance from junction to mounting base
100
K/W
20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
IE = 0; VCB = −200 V
−
IE = 0; VCB = −200 V; Tj = 150 °C
−
emitter cut-off current
IC = 0; VEB = −5 V
−
DC current gain
IC = −25 mA; VCE = −20 V
50
collector-emitter saturation voltage IC = −30 mA; IB = −5 mA
−
feedback capacitance
IC = ic = 0; VCE = −30 V; f = 1 MHz
−
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
MAX.
−10
−10
−50
−
−600
1.8
−
UNIT
nA
µA
nA
mV
pF
MHz
1996 Dec 09
3
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