2SB1626 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1626 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1626
• High DC Current Gain
• Low-Collector Saturation Voltage
• Complement to Type 2SD2495
(70IJJ03
APPLICATIONS
• Designed for audio.series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
. -,
""
62
FIH: I Base
2 Collector
3 Emitter
TO-22ftF package
B
- C-
-s-
!a "•''•*
u
F'
A
VCBO Collector-Base Voltage
-110
V
VCEO Collector-Emitter Voltage
-110
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-6
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
-1
A
30
W
150
'C
Tstg
Storage Temperature Range
-55-150 *c
L--
H
- R-
K
- -D
- N-
J ••
mm
DIM WIN
A 14.95
B 10.00
I""1
4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
0 2.70
R 2.20
S 2.65
u 6.40
MAX
15.05
10.10
4.60
0.90
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
\\N
NJ Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions \vithout
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the lime of noii
in press. I loue\er. NJ Senii-Conduetors assumes no responsibility for an\s or omissions ili.scove.ral in its use.
N.I Senii-C'uniluclors eiicuuraj-es customers to \erify thai datasheets are ciirivnl bol'oiv placing orders.
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