2SC5239 データシートの表示（PDF） - New Jersey Semiconductor
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2SC5239 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC5239
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
550
V
VcE(sat) Collector-Emitter Saturation Voltage
lc= 1A; IB=0.2A
VeE(sat) Base-Emitter Saturation Voltage
lc= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
0.5
V
1.2
V
100 u A
IEBO
Emitter Cutoff Current
VEB= TV; lc- 0
100 u A
hFE
DC Current Gain
lc=1A;VCE=4V
10
30
COB
Output Capacitance
lE=0;VCB=10V;f=1MHz
35
pF
fr
Current-Gain—Bandwidth Product
IE= -0.25A; VCE= 12V
6
MHz
Switching Times
ton
Turn-On Time
lstg
Storage Time
tf
Fall Time
lc=1A;lBi=0.15A;lB2=-0.45A;
Vcc= 250V; RL= 2500
0.7 us
4.0
PS
0.5 u s
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