S9016 データシートの表示（PDF） - SUNMATE electronic Co., LTD

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S9016

NPN SILICON EPITAXIAL PLANAR TRANSISTOR

SUNMATE electronic Co., LTD 

Electrical Characteristics TA = 25°C unless otherwise specified

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Symbol

V(BR)CBO

V(BR)CEO

Test conditions

IC=100μA,IE=0

IC=0.1mA,IB=0

V(BR)EBO IE=100μA,IC=0

Collector cut-off current

Emitter cut-off current

ICBO

IEBO

VCB=30V,IE=0

VEB=3V,IC=0

MIN TYP MAX UNIT

30

V

20

V

4

V

0.1 μA

0.1 μA

DC current gain

hFE

VCE=5V,IC=1mA

28 90 198

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB= 1mA

0.1 0.3 V

Base-emitter on voltage

Transition frequency

Output capacitance

Noise figure

VBE(on)

fT

Cob

NF

VCE=5V, IC=1mA

VCE=5V, IC= 1mA

VCB=10V,

IE=0,f=1MHz

VCE=5V,IC=1.0,

f=100MHz,RS=50Ω

0.72

400 620

1.2 1.6

1.2 1.6

V

MHz

pF

pF

2 of 3

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