Philips Semiconductors
Magnetic field sensor
Product specification
KMZ10A1
DESCRIPTION
The KMZ10A1 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications such as navigation, current and
earth magnetic field measurement etc. The special
arrangement of the sensing chip allows the construction of
coils for switching the auxiliary field (Hx) along the length
axis of the sensor. The sensor can be operated at any
frequency between DC and 1 MHz.
PINNING
PIN
1
2
3
4
SYMBOL
+VO
GND
−VO
VCC
DESCRIPTION
output voltage
ground
output voltage
supply voltage
handbook,Hhyalfpage
Hx
123 4
MGL420
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCC
Hy
Hx
S
PARAMETER
DC supply voltage
magnetic field strength
auxiliary field
sensitivity
Ss
sensitivity (with switched Hx)
Rbridge
Voffset
bridge resistance
offset voltage
CIRCUIT DIAGRAM
handbook, full pagewidth
MIN.
−
−0.5
−
−
−
0.85
−1.5
TYP.
5
−
0.5
14
22
−
−
MAX.
−
+0.5
−
−
−
1.75
+1.5
UNIT
V
kA/m
kA/m
m-k---A--V----⁄-⁄--m-V--
m-k---A--V----⁄-⁄--m-V--
kΩ
mV/V
MLC716
1998 Apr 06
1
2
3
4
+VO
GND
–VO VCC
Fig.2 Simplified circuit diagram.
2