BGA427 データシートの表示（PDF） - Infineon Technologies

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BGA427

Si-MMIC-Amplifier in SIEGET® 25-Technologie

Infineon Technologies 

Si-MMIC-Amplifier in SIEGET 25-Technologie

BGA427

• Cascadable 50 Ω-gain block

• Unconditionally stable

3

• Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)

4

gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)

IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)

• Noise figure NF = 2.2 dB at 1.8 GHz

• Typical device voltage VD = 2 V to 5 V

• Reverse isolation > 35 dB (Appl.2)

• Pb-free (RoHS compliant) package

Circuit Diagram

1

IN

2

1

3

+V

4

OUT

2

GND

EHA07378

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BGA427

Marking

BMs

1, IN

Pin Configuration

Package

2, GND 3, +V 4, Out SOT343

Maximum Ratings

Parameter

Device current

Device voltage

Total power dissipation

TS = 120 °C

RF input power

Junction temperature

Ambient temperature range

Storage temperature range

Symbol

ID

VD,+V

Ptot

PRFin

Tj

TA

Tstg

Value

25

6

150

-10

150

-65 ... 150

-65 ... 150

Unit

mA

V

mW

dBm

°C

Thermal Resistance

Junction - soldering point1)

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

≤ 295

K/W

1

2011-09-15

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