Q62702-G0067 データシートの表示（PDF） - Siemens AG

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Q62702-G0067

Si-MMIC-Amplifier in SIEGET® 25-Technologie

Siemens AG 

BGA 427

Si-MMIC-Amplifier in SIEGET® 25-Technologie

Preliminary data

• Cascadable 50 Ω-gain block

• Unconditionally stable

• Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1)

gain |S21|2 = 22 dB at 1.8 GHz (appl.2)

IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)

• Noise figure NF = 2.2 dB at 1.8 GHz

• typical device voltage VD = 2 V to 5 V

• Reverse isolation < 35 dB (appl.2)

3

4

2

1

VPS05605

3

+V

Circuit Diagram

4

OUT

1

IN

2

GND

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code Pin Configuration

BGA 427 BMs Q62702-G0067 1, IN 2, GND 3, +V

4, Out

Maximum Ratings

Parameter

Symbol

Value

Device current

Device voltage

Total power dissipation, TS ≤ tbd °C

RF input power

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

ID

VD,+V

Ptot

PRFin

Tj

TA

Tstg

RthJS

25

6

150

-10

150

-65 ...+150

-65 ...+150

≤ tbd

EHA07378

Package

SOT-343

Unit

mA

V

mW

dBm

°C

K/W

1) TS is measured on the emitter (GND) lead at the soldering point to the pcb

SSeemmicioconndduuctcotor rGGrorouupp

11

Au 1-19918-1-1919-081

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