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BGD804 データシートの表示(PDF) - Philips Electronics

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BGD804 Datasheet PDF : 12 Pages
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Philips Semiconductors
860 MHz, 20 dB gain power doubler amplifier
Product specification
BGD804
Table 5 Bandwidth 40 to 550 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75
SYMBOL
PARAMETER
CONDITIONS
Gp
power gain
f = 50 MHz
f = 550 MHz
SL
slope cable equivalent
f = 40 to 550 MHz
FL
flatness of frequency response f = 40 to 550 MHz
S11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
S22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
S21
CTB
phase response
composite triple beat
f = 50 MHz
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
Xmod
cross modulation
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
CSO
composite second order distortion 77 channels flat; Vo = 44 dBmV;
measured at 548.5 MHz
d2
second order distortion
Vo
output voltage
F
noise figure
note 1
dim = 60 dB; note 2
see Table 1
Itot
total current consumption (DC) note 3
MIN.
19.5
20
0.2
20
18.5
17
16
20
18.5
17
16
45
TYP.
20
20.6
28
23
20
20
28.5
28
24
19
66
MAX.
20.5
2
±0.35
+45
64
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
67 64 dB
67 62 dB
72 dB
66
dBmV
dB
395 410 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B;
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo 6 dB;
fr = 549.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 01
7

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