1PS79SB10 データシートの表示（PDF） - Philips Electronics
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1PS79SB10 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
Product specification
1PS79SB10
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; note 1; see Fig.3
VR = 1 V; f = 1 MHz; see Fig.4
MAX.
240
320
400
500
800
2
10
UNIT
mV
mV
mV
mV
mV
µA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-79 standard mounting conditions.
VALUE
450
UNIT
K/W
1998 Jul 16
3
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