2SA1617 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SA1617

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1617

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–55

V

–50

V

–5

V

–100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –55 —

voltage

Collector to emitter breakdown V(BR)CEO –50 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SA1617 is grouped by hFE as follows.

Grade

B

C

Mark

VIB

VIC

hFE

100 to 200 160 to 320

Max Unit

—

V

—

V

—

V

–0.5 µA

–0.5 µA

320

–0.2 V

–0.8 V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –30 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

See charcteristic curves of 2SA1031

2

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