KSH31C データシートの表示（PDF） - Fairchild Semiconductor
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KSH31C Datasheet PDF : 6 Pages
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KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: KSH31
: KSH31C
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage
: KSH31
: KSH31C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: KSH31
: KSH31C
Collector Cut-off Current
: KSH31
: KSH31C
Collector Cut-off Current
: KSH31
: KSH31C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Test Condition
IC = 30mA, IB = 0
VCE = 40V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VBE = 0
VCE = 100V, VBE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
IC = 3A, IB = 375mA
VCE = 4A, IC = 3A
VCE = 10V, IC = 500mA
Value
40
100
40
100
5
3
5
1
15
1.56
150
- 65 ~ 150
Min.
40
100
25
10
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
50
µA
50
µA
20
µA
20
µA
1
mA
50
1.2
V
1.8
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
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