KSH31CI データシートの表示（PDF） - Inchange Semiconductor
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KSH31CI Datasheet PDF : 3 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH31C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)*
VBE(on)*
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
IC= 3A; IB= 375mA
IC= 3A; VCE=4V
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1*
hFE2*
DC Current Gain
DC Current Gain
IC= 1A; VCE= 4V
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.5A; VCE= 10V
MIN
TYP MAX UNIT
100
V
1.2
V
1.8
V
20
uA
1.0
mA
25
10
50
3
MHz
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