BF998 データシートの表示（PDF） - Siemens AG

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BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 998

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, – VG1S = – VG2S = 4 V

Gate 1-source breakdown voltage

± IG1S = 10 mA, VG2S = VDS = 0

Gate 2-source breakdown voltage

± IG2S = 10 mA, VG1S = VDS = 0

Gate 1-source leakage current

± VG1S = 5 V, VG2S = VDS = 0

Gate 2-source leakage current

± VG2S = 5 V, VG1S = VDS = 0

Drain current

VDS = 8 V, VG1S = 0, VG2S = 4 V

Gate 1-source pinch-off voltage

VDS = 8 V, VG2S = 4 V, ID = 20 µA

Gate 2-source pinch-off voltage

VDS = 8 V, VG1S = 0, ID = 20 µA

Symbol

Values

Unit

min. typ. max.

V(BR) DS

12

–

V ± (BR) G1SS 8

–

V ± (BR) G2SS 8

–

± IG1SS

–

–

± IG2SS

–

–

IDSS

2

–

– VG1S(p)

–

–

– VG2S(p)

–

–

–

V

12

12

50 nA

50

18 mA

2.5 V

2

Semiconductor Group

2

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