BF998 データシートの表示（PDF） - Siemens AG

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BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 998

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

AC Characteristics

Forward transconductance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

f = 1 kHz

Gate 1 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

f = 1 MHz

Gate 2 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

f = 1 MHz

Reverse transfer capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

f = 1 MHz

Output capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

f = 1 MHz

Power gain

(test circuit 1)

VDS = 8 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS, VG2S = 4 V

Power gain

(test circuit 2)

VDS = 8 V, ID = 10 mA, f = 800 MHz,

GG = 3.3 mS, GL = 1 mS, VG2S = 4 V

Noise figure

(test circuit 1)

VDS = 8 V, ID = 10 mA, f = 200 MHz,

GG = 2 mS, GL = 0.5 mS, VG2S = 4 V

Noise figure

(test circuit 2)

VDS = 8 V, ID = 10 mA, f = 800 MHz,

GG = 3.3 mS, GL = 1 mS, VG2S = 4 V

Control range

(test circuit 2)

VDS = 8 V, VG2S = 4 … – 2 V

f = 800 MHz

Symbol

Values

Unit

min. typ. max.

gfs

–

24 –

mS

Cg1ss

–

2.1 2.5 pF

Cg2ss

–

1.2 –

Cdg1

–

25 –

fF

Cdss

–

1.05 –

pF

Gps

–

28 –

dB

Gps

–

20 –

F

–

0.6 –

dB

F

–

1

–

∆Gps

40

–

–

Semiconductor Group

3

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