LH28F160BV-TL データシートの表示（PDF） - Sharp Electronics

部品番号

コンポーネント説明

メーカー

LH28F160BV-TL

16 M-bit (1 MB x 16) Smart 3 Flash Memories

Sharp Electronics 

LH28F160BG-TL/BGH-TL

PIN DESCRIPTION

SYMBOL

TYPE

NAME AND FUNCTION

A0-A19

INPUT

ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses

are internally latched during a write cycle.

DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs

DQ0-DQ15 INPUT/ data during memory array, status register and identifier code read cycles. Data pins float

OUTPUT to high-impedance when the chip is deselected or outputs are disabled. Data is

internally latched during a write cycle.

CE#

RP#

OE#

WE#

WP#

RY/BY#

VPP

VCC

GND

NC

INPUT

INPUT

INPUT

INPUT

INPUT

CHIP ENABLE : Activates the device’s control logic, input buffers, decoders and sense

amplifiers. CE#-high deselects the device and reduces power consumption to standby

levels.

RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets

Y internal automation. RP#-high enables normal operation. When driven low, RP# inhibits

write operations which provide data protection during power transitions. Exit from deep

power-down sets the device to read array mode. Block erase or word write with VIH <

R RP# < VHH produce spurious results and should not be attempted.

OUTPUT ENABLE : Gates the device’s outputs during a read cycle.

A WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are

latched on the rising edge of the WE# pulse.

WRITE PROTECT : Master control for boot blocks locking. When VIL, locked boot

N blocks cannot be erased and programmed.

I READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is

OUTPUT

I M SUPPLY

E L SUPPLY

P RSUPPLY

performing an internal operation (block erase or word write). RY/BY#-high-impedance

indicates that the WSM is ready for new commands, block erase is suspended, and

word write is inactive, word write is suspended, or the device is in deep power-down

mode.

BLOCK ERASE AND WORD WRITE POWER SUPPLY : For erasing array blocks or

writing words. With VPP ≤ VPPLK, memory contents cannot be altered. Block erase and

word write with an invalid VPP (see Section 6.2.3 "DC CHARACTERISTICS") produce

spurious results and should not be attempted.

DEVICE POWER SUPPLY : 2.7 to 3.6 V. Do not float any power pins. With VCC ≤

VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid

VCC voltage (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results

and should not be attempted.

GROUND : Do not float any ground pins.

NO CONNECT : Lead is not internal connected; recommend to be floated.

-4-

Share Link: