ES2F データシートの表示（PDF） - Vishay Semiconductors
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ES2F Datasheet PDF : 5 Pages
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www.vishay.com
ES2F, ES2G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
ES2F
ES2G
Maximum instantaneous forward voltage 2.0 A
VF (1)
1.1
Maximum reverse current at VRRM
TA = 25 °C
10
IR
TA = 100 °C
200
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
trr
50
Maximum reverse recovery current
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
IRM
3.0
Maximum stored charge
IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM
Qrr
50
Typical junction capacitance
4.0 V, 1 MHz
CJ
15
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
V
µA
ns
ns
A
nC
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2F
ES2G
Maximum thermal resistance
RJA (1)
75
RJL (1)
25
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
ES2G-E3/52T
0.096
52T
ES2G-E3/5BT
0.096
5BT
ES2GHE3_A/H (1)
0.096
H
ES2GHE3_A/I (1)
0.096
I
Note
(1) AEC-Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 22-Mar-18
2
Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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