2SA1213(2006) データシートの表示（PDF） - Toshiba

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2SA1213
(Rev.:2006)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

IC – VBE

−2.0

Common emitter

VCE = −2 V

−1.6

−1.2

Ta = 100°C 25 −55

−0.8

−0.4

0

0

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

Base-emitter voltage VBE (V)

1.2

(1)

1.0

0.8

PC – Ta

(1) Mounted on ceramic substrate

2

(250 mm × 0.8 t)

(2) No heat sink

0.6

(2)

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

2SA1213

Safe Operating Area

−3000

IC max (pulse)*

100 ms*

IC max

1 s*

−1000 (continuous)

−500

−300

−100

DC operation

Ta = 25°C

−50

−30

10 ms*

1 ms*

−10 *: Single nonrepetitive pulse

Ta = 25°C

−5

Curves must be derated linearly

−3

with increase in temperature.

Tested without a substrate.

−1

−0.1 −0.3

−1

−3

VCEO max

−10

−30

Collector-emitter voltage VCE (V)

−100

4

2006-11-09

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