2SA1213 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SA1213 Datasheet PDF : 4 Pages
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Silicon Planar Epitaxial Transistor
FEATURES
Low saturation voltage
High speed switching time
Pb
Lead-free
Small flat package
PC=1.0 to 2.0W(mounted on ceramic substrate)
Complementary to 2SC2873
Production specification
2SA1213
ORDERING INFORMATION
Type No.
Marking
2SA1213
NO/NY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
IC
Collector Current
-2
IB
Base Current
-0.4
PC
Collector Dissipation
500
1000(Note1)
RθjA
Thermal resistance junction to ambient air 75
RθjC
Junction-case thermal resistance
35
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0.8t)
-55 to +150
Units
V
V
V
A
A
mW
°C/W
°C/W
℃
E040
Rev.A
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