2SA1213 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SA1213 Datasheet PDF : 4 Pages
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Production specification
Silicon Planar Epitaxial Transistor
2SA1213
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-50
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1 μA
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
VCE=-2V,IC=-0.5A
70
VCE=-2V,IC=-2.0A
20
IC=-1A,IB=-0.05A
IC=-1A,IB=-0.05A
VCE=-2V, IC=-0.5A
VCB=-10V,IE=0,f=1MHz
240
-0.5 V
-1.2 V
120
MHz
40
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
NO
Y
120-240
NY
E040
Rev.A
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