Q67000-S273 データシートの表示（PDF） - Infineon Technologies

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Q67000-S273

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP 319

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Thermal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

R thJS

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Values

Unit

-55 ... + 150 ˚C

-55 ... + 150

≤ 70

K/W

≤ 10

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 ˚C

VDS = 50 V, VGS = 0 V, Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 5 V, ID = 2.4 A

V(BR)DSS

50

VGS(th)

1.2

IDSS

-

-

IGSS

-

RDS(on)

-

V

-

-

1.6

2

µA

0.1

1

10

100

nA

10

100

Ω

0.06

0.07

Data Sheet

2

05.99

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